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datasheet rev. 1.2, 2011-09-01 automotive btf50060-1tea smart high-side power switch, one channel high pwm frequencies speed profet tm
datasheet 2 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea 1 overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.1 pin assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.2 pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.3 definition of terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 general product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.2 functional range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.3 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.1 power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.1.1 switching a resisitve load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.1.2 switching an inductive load - infineon? smart clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.1.3 switching a capacitive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5.1.4 inverse load current operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5.2 input circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5.3 protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5.3.1 protection by over current shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5.3.2 protection by over temperature shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.3.3 infineon? intelligent latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.3.4 reverse polarity protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.3.5 protection during loss of ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5.3.6 protection during loss of load or loss of v s condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5.3.7 protection during esd or over voltage condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5.4 diagnosis functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 5.4.1 sense output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 5.4.2 enhancing accuracy of the sense output by end of line calibration . . . . . . . . . . . . . . . . . . . . . . . 22 5.4.3 short-to-battery detection / open load detection in off st ate . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5.5 undervoltage shutdown & restart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 6 electrical characteristics btf50060-1tea . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 6.1 electrical characteristics table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 6.2 parameter dependencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 6.2.1 power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 6.2.2 input circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 6.2.3 protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 6.2.4 diagnosis functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 7 application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 7.1 further application informat ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 8 package outlines and parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
pg-to252-5-11 type package marking btf50060-1tea pg-to252-5-11 f50060a datasheet 3 rev. 1.2, 2011-09-01 speed profet tm smart high-side power switch, one channel high pwm frequencies btf50060-1tea 1overview application ? driving all types of resistive, inductive and capacitive loads ? most suitable for driving load s with pwm frequency from 0hz (dc operation) up to 33khz and above ? drives valves, coils, and motors, wit h inrush currents up to 60 a features ? optimized for pwm frequencies of approx. 25 khz ? 3.3v and 5v compatible logic inputs ? advanced analog load current sense signal ? designed for easy current sense calibration ? embedded diagnosis features (e.g. open load in on and off state) ? embedded protection functions (e.g. over current shutdown, over temperature shutdown) ?infineon ? intelligent latch ?infineon ? smart clamping ? green product (rohs compliant) ? aec qualified description embedded in a pg-to252-5-11 package, the btf50060-1tea is a 6m single channel smart high-side power switch. it is based on smart power chip on chip technology with a p-channel vertical power mosfet, providing protective and diagnostic func tions. it is specially designed to drive loads in the harsh automotive environment. table 1 product summary parameter symbol values range of typical pwm frequencies f pwm 0 hz ... 33 khz maximum on-state resistance at t j = 150 c r ds(on)_150 12 m ? nominal supply voltage range for operation v s(nom) 6 v ? 19 v nominal load current (dc operation) i l(nom) 16.5 a typical stand-by current at t j = 25 c i s(off) 5 a minimum short circuit current shutdown threshold i l(sc) 60 a maximum reverse battery voltage - v s(rev) 16 v
datasheet 4 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea block diagram embedded protection functions ?infineon ? intelligent latch - resettable latch resulting from protective switch off ? over current protection by short-circuit shutdown ? overload protection by over-temperature shutdown ?infineon ? smart clamping embedded diagnosis functions ? advanced analog load current sense signal with defined positive offset current; enabling load diagnosis like open load in on state, overload ? providing defined fault signal ? open load detection in off state ? short-to-battery detection 2 block diagram figure 1 block diagram of btf50060-1tea for a diagram of diagnosis & protection block , please see figure 15 . esd + over voltage protection blockdiagram.emf vs out in gnd is diagnosis & protection sense output input circuit r in temp gate driver smart clamping a
datasheet 5 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea pin configuration 3 pin configuration 3.1 pin assignment figure 2 pin configuration 3.2 pin definitions and functions 3.3 definition of terms figure 3 shows all terms used for currents and voltages in th is data sheet, with associated convention for positive values. figure 3 definition of currents and voltages pin symbol function 1gnd ground; ground connection for control chip. 2in input; digital 3.3 v and 5 v compatible logic i nput; activates power switch if set to high level; includes inte rnal pull-down resistor r in . tab; 3 1) 1) tab and pin 3 are internally connected. pin 3 is cut. out output; protected high side power output 4is sense; provides analog sense current signal and defined fault signal. 5vs supply voltage; positive supply voltage for logic and power stage 2) 2) pcb traces have to be designed to withstand maximum current occuring in the application. pinconfiguration .emf 1 2 3 4 5 gnd (out) in is v s out (tab) terms.emf v in out v s v out i s in v s i in i gnd gnd is i is i l v sis v is v sd
datasheet 6 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea general product characteristics 4 general product characteristics 4.1 absolute maximum ratings table 2 absolute maximum ratings 1) t j = -40c to 150c ; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) parameter symbol values unit note / test condition number min. t y p . max. supply voltages supply voltage v s -0.3 28 v ? p_4.1 reverse polarity voltage on pin gnd, is |- v s(rev) |0 16v 2) , 3) p_4.2 supply voltage for short circuit protection v bat(sc) 028v 4) r ecu = 20m , r cable = 6m /m, l cable = 1h/m, l = 0 or 5m, see chapter 5.3.1 p_4.3 supply voltage for load dump protection v s(ld) ?45v r i = 2 5) , r l = 1.0 , t d = 400ms p_4.4 short circuit capability short circuit cycle capability n rsc1 ?1 e6 (grade a) ? 4)6) p_4.21 in + is + gnd pin voltage at in pin v in -0.3 6 v ? p_4.5 current through in pin i in -2 2 ma t < 2min p_4.6 voltage at is pin v is -0.3 v s v ? p_4.7 current through is pin i is -2 10 ma ? p_4.8 current through gnd pin i gnd -2 10 ma ? p_4.9 power stage load current i l - i l(sc) i l(sc) a ? p_4.10 maximum energy dissipation for switching off an inductive load - single pulse e as ?280mj v s = 13.5v i l(0) = 20a t j(0) = 150c see figure 4 and chapter 5.1.2 p_4.11 maximum energy dissipation for switching off an inductive load - repetitive pulse e ar ?84mj v s = 13.5v i l(0) = 20a t j(0) = 105c see figure 4 and chapter 5.1.2 p_4.13 temperatures junction temperature t j -40 150 c ? p_4.14
datasheet 7 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea general product characteristics dynamic temperature increase while switching t j ? 60 k ? p_4.15 storage temperature t stg -55 150 c ? p_4.16 esd susceptibility esd resistivity hbm all pins to gnd v esd1 -2 2 kv hbm 7) p_4.17 esd resistivity hbm v s vs. gnd, v s vs. out, out vs. gnd v esd2 -4 4 kv hbm 7) p_4.18 esd resistivity cdm all pins to gnd v esd3 -500 500 v cdm 8) p_4.19 esd resistivity cdm corner pins v esd4 -750 750 v cdm 8) p_4.20 1) not subject to production test, specified by design. 2) in case of reverse polarity voltage on pin in, i in needs to be limited (see p_ 4.6) by external resistor r input , see figure 45 . 3) in case of reverse polarity voltage, current through the out pin needs to be limited by external circuitry to prevent over heating (see p_4.14). power dissipation during re verse polarity voltage can be calculated by equation (3) . please note, build-in protection functions are not avai lable during reverse polarity condition. 4) in accordance to aec q100-012 and aec q101-006. 5) v s(ld) is set up without the dut connec ted to the generator per iso 7637-1. 6) test aborted after 1 e6 cycles. 7) esd susceptibility, hbm according to ansi/esda/jedec js-001-2010 8) esd susceptibility, charged device model ?cdm? eia/jesd22-c101 or esda stm5.3.1 table 2 absolute maximum ratings (cont?d) 1) t j = -40c to 150c ; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) parameter symbol values unit note / test condition number min. t y p . max.
datasheet 8 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea general product characteristics figure 4 maximum energy dissipation fo r switching off an inductive load e a vs. load current notes 1. stresses above the ones listed here may cause perma nent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. integrated protection func tions are designed to prevent ic destructi on under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. pr otection functi ons are not designed for continuous repetitive operation. 1 10 100 1000 10 100 i l(0) [a] e a [mj] e_ar (tj(0) = 105c) e_as (tj(0) = 150c)
datasheet 9 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea general product characteristics 4.2 functional range figure 5 overview of functional ranges note: within the functional or operating range, the ic operat es as described in the circuit description. the electrical characteristics are specif ied within the conditions given in th e electrical char acteristics table. table 3 functional range parameter symbol values unit note / test condition number min. t y p . max. nominal supply voltage range for operation v s(nom) 6 19 v ? p_4.23 extended supply voltage range for operation v s(ext) v s(uv)on 28 v 1)2) 1) see chapter 5.5 , undervoltage turn on voltage and undervoltage turn off voltage 2) in extended supply voltage range, the device is functi onal but electrical parameters are not specified. p_4.24 extended supply voltage range for short dynamic undervoltage swings v s(dyn) v s(uv)off v s(uv)on v 1)2)3) 3) operation only if supply voltage was in range of v s(ext) before undervoltage swing. othe rwise, device will stay off. p_4.25 junction temperature t j -40 150 c ? p_4.26 v s v s(uv)off v s(uv)on 6v 19v 28v v s(nom) v s(ext) v s(dyn) functionalrange.emf 13.5v
datasheet 10 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea general product characteristics 4.3 thermal resistance note: this thermal data was generated in accordance wit h jedec jesd51 standards. fo r more information, go to www.jedec.org . figure 6 and figure 7 are showing the typical thermal impedance of btf50060-1tea mounted according to jedec jesd51-2,-5,-7 at natural c onvection on fr4 1s and 2s2p boar d. the product (chip + package) was simulated on a 76.4 114.3 1.5 mm board with 2 inne r copper layers (2 70m cu, 2 35m cu). where applicable, a thermal via array under the exposed pad co ntacted the first inner copper layer. the pcb layer structure is shown in figure 8 . the pcb layout is shown in figure 9 . table 4 thermal resistance parameter symbol values unit note / test condition number min. typ. max. thermal resistance - junction to case r thjc 1) 1) not subject to production test, specified by design. ? 1 1.1 k/w ? p_4.27 thermal resistance - junction to ambient - 2s2p r thja_2s2p 1) ?22?k/w 2) 2) specified rthja value is according to jedec jesd51-2,-5,- 7 at natural convection on fr4 2s2p board; the product (chip+package) was simulated on a 76.2 114.3 1.5 mm boar d with 2 inner copper layers (2 70 mm cu, 2 35 mm cu). where applicable a thermal via array under the exposed pad contacted the first inner copper layer. p_4.29 figure 6 typical transient thermal impedance z th(ja) = f( t p ) for different cooling areas figure 7 typical transient thermal impedance z th(ja) = f( t p ) for pwm operation with duty cycles d = t / t period on a 2s2p pcb
datasheet 11 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea general product characteristics figure 8 cross section of 1s and 2s2p pcb used for z thja simulation figure 9 front view of pcb layout used for z thja simulation 1.5mm 70m 35m 0.3mm pcb 2s2p.emf 2s2p pcb 1.5mm 70m pcb 1s.emf 1s pcb 600mm2 300mm2 min pcb front.emf
datasheet 12 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea functional description 5 functional description 5.1 power stage the power stage is built by a p-channel vertical power mosfet (dmos). the on-state resistance r ds(on) depends on the supply voltage v s as well as the junction temperature t j . figure 26 shows the dependencies for the typical on-state resistance. the behav ior in reverse polarity is described in chapter 5.3.4 . a high signal at the input pin (see chapter 5.2 ) causes the power dmos to switch on. a low signal at the input pin causes the power dmos to switch off. 5.1.1 switching a resisitve load defined slew rates for turn on and off as well as edg e shaping support pwm?ing of the load while achieving lowest emc emission at minimum switching losses. figure 10 shows the typical timing when switching a resistive load. please note: if the devices logic is inac tive, e.g. because the in signal was low for t > t reset , the logic of the device needs a wake-up time of t wake for turning the output on in addition to the turn on time t on . see also figure 11 . figure 10 switching a resistive load switchingresistiveload_f.emf v out t v in 10% v s 30% v s 70% v s 90% v s t on t off (d v/ d t ) on (d v/ d t ) off t r t f v in(h),min v in(l),max t
datasheet 13 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea functional description figure 11 wake up timing 5.1.2 switching an inductive load - infineon ? smart clamping when switching off inductive loads with no path for load current freewheeling av ailable, the output voltage v out drops below ground potential due to the involved inductance ( -d i l /dt = - v l /l ; - v out ? - v l ). to prevent the destruction of the device due to high voltages, there is a voltage clamp mechanism implemented that keeps the negative output voltage at a certain level (- v out = v s - v sd(cl) ). please refer to figure 1 and figure 12 for details. figure 12 switching an inductance nevertheless, the energy capability of the device is limited because t he energy is co nverted into heat. that?s why the maximum allowed load inductance is limited as well. please see figure 4 for limitations of energy and load inductance. for calculationg the demagnization energy, equation (1) may be used: (1) the equation can be simplified under the assumption of r l = 0 to: (2) the btf50060-1tea provides infineon ? smart clamping functi onality. to optimize the energy capability for single and parallel operation, the clamp voltage v sd(cl) increases over the junction temperature t j and load current i l . figure 33 shows the dependency from t j for the typical v sd(cl) . please refer also to figure 15 . t t wake-up.emf v in v out t i is t wake +t sis(on) i is(offset) t reset t wake +t on t > t reset t < t reset t on t sis(on) v out switchinginductance .e mf t i l t v s on off v sd(cl) e a v s dcl () l r l ------ v s v s dcl () ? r l -------------------------------- 1 r l i l v sd cl () v s ? ---------------------------------- + ?? ?? ln i l + = e a 1 2 -- - li l 2 v s dcl () v s dcl () v s ? -------------------------------- =
datasheet 14 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea functional description 5.1.3 switching a capacitive load a capacitive load?s dominant characteri stic is it?s inrush cu rrent. the btf50060-1tea can support inrush currents up to i l(sc) . if the inrush current reaches i l(sc) , the device may detect a short ci rcuit condition and switches off. for a description of the short circuit pr otection mechanism, please refer to chapter 5.3.1 . 5.1.4 inverse load current operation in case of a negative load current, e.g. caused by load operating as a generator, the device can not block a current flowing through the intrinsic body diode. see figure 13 . the power stage of the devi ce can be switched on or stays on as long as v in = high, reaching the same r ds(on) as for positive load currents, if no fault condition is detected. in case of fault c ondition, the logic of the device will switch off the powe r stage and supply a fault signal i is(fault) . since the device can not block a negative load current (even under fault conditions), it can not protect itself from overload condition. in the applicat ion, overload conditions , e.g. over temperature, must not occur during inverse load current operation. figure 13 inverse load current operation 5.2 input circuit the input circuitry is compatible wit h 3.3 and 5v micro controllers. if v in is set to v in = v in(h) ( v in = high), the device will turn on. see figure 10 for the timings. if v in is set to v in = v in(l) ( v in = low), the power stage of the device will be turned of f. the input circuitr y has a hysteresis v in . the input circuitry is compatible with pwm applications. figure 14 shows the electrical equivalent input circ uitry. the logic of th e btf50060-1tea stays active for a delay time t reset after the switch off signal. figure 14 input pin circuitry applying an input voltage of v in > 20v (absolute maximum ratings exceeded!) may force the btf50060-1tea to deactivate parts of the logic circuitry. this includes the undervoltage shutdo wn, the undervoltage restart delay, and the analog sense function. in this case, also the short circuit shutdown threshold i l(sc) is set to typically 50a, and load gnd logic invers.e mf v s out g - i l(inv) in gnd r in inputcircuitry.emf
datasheet 15 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea functional description the latch reset time t reset is reduced to typically 200s. to rese t this behavior, set input voltage to v in = low for t>300s.
datasheet 16 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea functional description 5.3 protection functions the btf50060-1tea provides embedded protective function s. integrated protection functions are designed to prevent the destruction of the ic from fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functi ons are designed for neither continuous nor repetitive operation. in case of overload, high inrush currents, or short circ uit to ground, the btf50060-1tea offers several protection mechanisms. figure 15 describes the functionality of the diagnosis and protection block. figure 15 diagram of diagnosis & protection block 5.3.1 protection by o ver current shutdown the internal logic permanently monitors the load current i l . in the event of a load current exceeding the short circuit shutdown threshold ( i l > i l(sc) ), the output will switch off with a latchi ng behavior. during an over current shutdown, an overshooting i l(sc)peak may occur, depending on the short circuit impedances. for the case the device is in on state while short circ uit appears, the typical overshooting i l(sc)peak as a function of the steepness of the short circuit current d i sc /d t , see chapter 6.2.3 . for a detailed description of the latching behavior, please see chapter 5.3.3 . at lower supply voltages the current tripping level i l(sc) will decrease depending on the supply voltage. at v s = 4.7v, the current tripping level will be reduced to i l(sc)lv . please refer to figure 35 for typical current tripping level i l(sc) as a function of the supply voltage v s . diagnosis & protection diagnosisprotection .emf temp input circuit sense output i is(fault) 0 1 1 a gate driver undervoltage protection v s(uv) delay = t d(uv) no delay & intelligent latch t jt i l(sc) 1 qs qr open load at off v out(ol) enable vs out 1 delay = t reset no delay timer reset no fault in no undervoltage r out(gnd)
datasheet 17 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea functional description 5.3.2 protection by over temperature shutdown the internal logic permanently monitors the junction temp erature of the output stage. in the event of an over temperature ( t j > t jt ) the output will immediately switch off with a latchi ng behavior, see chapter 5.3.3 for details. 5.3.3 infineon ? intelligent latch the btf50060-1tea provides infineon ? intelligent latch to avoid permanent resetting of a protective, latched switch off caused by over current shutdown or over temperature shutdown) in pwm applications. to reset a latched protective switch o ff the fault has to be acknowledged by commanding the input low for a minimum duration of t reset . see figure 16 for details. figure 16 infineon ? intelligent latch - fault acknowledge and latch reset 5.3.4 reverse polarity protection reverse polarity condition is the mix- up of the power supply connections of the entire application. this means, application gnd connector is connected to positive supply voltage, while vs pin is connected to negative supply voltage or ground potential. see figure 17 and figure 45 . figure 17 reverse polarity condition t intelligentlatch.emf v in t i is i is(fault ) t over temperature / short circuit t v out t reset t reset i is(offset) latch reset latch reset load gnd revers.emf v s out - v s(rev) - i l r is r sense r input - i in logic
datasheet 18 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea functional description under reverse polarity condit ion, the output stage can not block a cu rrent flow. it will conduct a load current via the intrinsic body diode. the current th rough the output stage has to be limited either by the load itself or by external circuitry, to avoid over heat ing of the power stage. power losses in the power stage during reverse polarity condition can be calculated by equation (3) : (3) additionally, the current into the logic pins has to be limited to the maximum current described in chapter 4.1 with an external resistors. figure 46 shows a typical application. resistors r input and r sense are used to limit the current in the logic of the device and in the esd protection stage. the recommended value for r input = r sense = 10k . as long as |- v s(rev) | < 16v, the current through the gnd pin of the device is blocked by an internal diode. 5.3.5 protection during loss of ground in case of loss of the module ground or device ground connection (gnd pin) the device protects itself by automatically turning off (whe n it was previously on) or remains off (even if the load remains connected to ground), regardless if the input is driven high or low. in case gnd recovers the device may need a reset via the in pin to return to normal operation. 5.3.6 protection during loss of load or loss of v s condition in case of loss of load with charged primary inductances the maximum supply voltage has to be limited. it is recommended to use a z-diode, a varistor ( v za < 40v) or v s clamping power switches with connected loads in parallel. in case of loss of a charged inductive load, disturbances on pin out may require a reset on in pin for the device to regain normal operation. in case of loss of v s connection with charged inductive loads, a current path wit h load current capability has to be provided, to demagnetize the charged inductances. it is recommended to use a diode, a z-diode or a varistor ( v zb < 16v, v zl + v d < 16v). for higher clamp voltages currents through all pins have to be limited according to the maximum ratings. please see figure 18 and figure 19 for details. figure 18 loss of v s p rev i lrev () ? () v sd rev () ? () = lossofvs.emf v d v zl load v zb load v za gnd logic v s out sm ar t clamping gnd logic v s out sm ar t clamping
datasheet 19 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea functional description figure 19 loss of load 5.3.7 protection during esd or over voltage condition all logic pins have esd protection. a dedicated clamp me chanism protects the logic ic against transient over voltages. see figure 20 for details. figure 20 over voltage protection in the case ( v s > max v s(sc) )&( v s < v sd(cl) ), the output transistor is still operational and fo llows the input. parameters are no longer warranted and lifetime is redu ced compared to normal mode. this specially impacts the short circuit robustness, as well as the maximum energy e as the device can handle. the btf50060-1tea provides infineon ? smart clamping functionality, wh ich suppresses non nominal over voltages by actively clamping the over voltage across the power stage and the load. this is achieved by controlling the clamp voltage v sd(cl) depending on the junction temperature t j and the load current i l . see figure 15 for details. please refer also to chapter 5.1.2 . v zb load v za lossofload.emf gnd logic v s out sm ar t clamping esd protection is overvoltageprotection.emf v s over voltage protection v z(ic) in out gnd
datasheet 20 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea functional description 5.4 diagnosis functions for diagnosis purpose, the btf50060-1 tea provides an enhanced analog sense signal at the pin is. for an overview of the diagnosis func tions, you may have a look at figure 15 ? diagram of diagnosis & protection block ?. 5.4.1 sense output the current sense output is a cu rrent source driving a signal i is proportional to the load current (see equation (5) ) as long as no ?hard? failure mode occurs (short circuit to gnd / over temperature) and v sis = v s - v is > 3v. it is activated and deactivated by the input signal. us ually, in the applicatio n a pull-down resistor r is is connected between the current sense pin is and gnd pin. a typical value is r is = 1.0 k . figure 46 shows a simplified application setup. table 5 is giving a quick reference for the logic / anal og state of the is pin during device operation. in case a short circuit or an over temperature condition is detected, the sense output is supplying a fault signal i is(fault) . the fault signal is reset by an input signal being low for t > t reset . as long as an open load, short-to- v s or inverse operation is detected while the device is in off state, the sense output al so supplies the fault signal i is(fault) . the timings and logic of the is pin are described in figure 21 . during output turning on or off, the sense signal is invalid. please note: if th e devices logic is inactive, e.g. because the in signal was low for t > t reset , the logic of the device needs a wake-up time of t wake for activating the sense output in addition to the current sense settling time for turn on t sis(on) . see also figure 11 . table 5 truth table for sense signal operation mode input level output level sense output normal operation high 1) 1) high: v in = v in(h) v out = v s - r ds(on) * i l i is = ( i l / k is ) + i is(offset) low 2) for t < t reset 2) low: v in = v in(l) v out ~ gnd ( v out < v out(oll) ) i is = i is(offset) low for t > t reset z 3) ( i is = i is(ll) ) 3) z: high impedance inverse operation high v out > v s i is i is(offset) low for t < t reset i is = i is(offset) low for t > t reset i is = i is(fault) after short circuit to gnd or over temperature detection high or low for t < t reset v out ~ gnd i is = i is(fault) low for t > t reset z ( i is = i is(ll) ) short circuit to v s high v out = v s i is i is(offset) low for t < t reset i is = i is(offset) low for t > t reset i is = i is(fault) open load high v out = v s i is i is(offset) low for t < t reset v out > v out(olh) 4) 4) can be achieved e.g. with external pull up resistor r ol , see figure 46 . i is = i is(offset) low for t > t reset i is = i is(fault)
datasheet 21 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea functional description figure 21 sense output timing figure 22 shows the current sense as a function of the lo ad current in the power dmos. the curves represent the minimum and maximum values for the sense current, as well as the ideal sense current, assuming an ideal k is factor value as well as an ideal i is(offset) . figure 22 sense current as a function of the load current ( v sis > 3v) the sense current can be calculated out of the load current by the following equation (4) : (4) or, vice versa, the load current can be calc ulated out of the sense current by following equation (5) : (5) t t cur r entsensetim ing .em f v in i l t i is 90% ( i is static - i is(offset) ) t sis(on) t sis (off) 10% ( i is static - i is(offset) ) t sis(lc) t sis (lc) t reset i is (offset) 0 2 4 6 8 10 0 20406080100 i l [a] i is [ma] max i is(fault) typ i is(fault) min i is(fault) max i l(sc) max i is typ i is min i is min i l(sc) typ i l(sc) i is 1 k -- - is i l i is offset () + = i l k is i is i is offset () ? () =
datasheet 22 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea functional description for definition of k is , the following equation (6) is used: (6) i l1 and i l2 are two different load currents, i is(il1) and i is(il2) are the corresponding sense currents. 5.4.2 enhancing accuracy of the sense output by e nd of line calibration for some applications it may be necessary to measure th e load current with very high accuracy. to increase the device accuracy, different methods can be used, e.g. single point calibration or dual point calibration. the variance of the sense current at a certain load current depends on the variance of the factor k is as well as on the variance of the offset current i is(offset) . the temperature variance of the factor k is over the temperature range is described with the parameter k is,temp . (7) the variance of the sense current offset over the temperature range is defined as shown in equation (8) : (8) 5.4.3 short-to-battery detection / open load detection in off state the btf50060-1tea provides open load diagnosis in off stat e. this is achieved by m onitoring the out voltage. the open load at off di agnosis is activated if v in = low for t > t reset . an open load or short-to-battery is detected if v out > v out(olh) . to provoke this condition during open load, it may be necessary to use an external pull up resistor r ol (see figure 46 ). in case of detecting a shorted load to battery, open load, or inverse operation in off state, the pin is provides a defined fault current i is(fault) . if v out drops below v out(oll) , or v in is set to high, the fault signal is removed. figure 23 shows the behavior of the open load at off diagnosis. figure 43 and figure 44 provide the typical behavior of v out(olh) and v out(oll) as a function of the supply voltage and junction temperature. the device internally connect s out with gnd pin with an effective resistor r out(gnd) . in case the application provides high leakage current outside of the btf50060-1tea between vs and out, it may be necessary to use an external resistor r l_ol to disable open load detection. figure 46 gives an example of external circuitry for enabling / disabling open load detection in off state. k is i l1 i l2 ? i is i l1 () i is i l2 () ? -------------------------------------------- = k is temp () max k is 40 c ? () k is 25 c () ? k is 150 c () k is 25 c () ? ; [] = i is offset () max i is offset () 40 c ? () i is offset () 25 c () ? i is offset () 150 c () i is offset () 25 c () ? ; [ ] =
datasheet 23 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea functional description figure 23 open load detection in off state 5.5 undervoltage shutdown & restart the btf50060-1tea switches off whenever v s drops below v s(uv)off . the device restarts automatically after the supply voltage increases to a sufficient level ( v s > v s(uv)on ) and a delay time of t delay(uv) , if the input pin in is high. please see figure 24 for details. the fault signal is reset if v s is below v s(uv) for more than typ. 70s. figure 24 undervoltage shutdown and restart openload _at_off.emf v out t i is v out(ol) v out(oll ) v out(olh ) t i is(ll) i is(fault) undervoltage .emf v s t v out t delay(uv) v s(uv) on v s(uv)off v s(uv)on z t t v in high
datasheet 24 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea electrical characteristics btf50060-1tea 6 electrical character istics btf50060-1tea 6.1 electrical characteristics table table 6 electrical characteristics: btf50060-1tea v s = 6v to 19v , t j = -40c to 150c , all voltages with respect to ground , positive current flowing into pin (unless otherwise specified) parameter symbol values unit note / test condition number min. typ. max. operating currents standby current for whole device with load t j = 25c i s(off)_25 1) ?58a v in = low for t > t reset , v s = 13.5v, t j = 25c v out < v out(oll) p_6.1 standby current for whole device with load t j = 85c i s(off)_85 1) ?58a v in = low for t > t reset , v s = 13.5v, t j = 85c v out < v out(oll) p_6.2 standby current for whole device with load t j = 150c i s(off)_150 ?2060a v in = low for t > t reset , v s = 13.5v, t j = 150c v out < v out(oll) p_6.3 ground current during on i gnd(on) ?35ma v in = high, t > t on p_6.4 supply current during open load detection in off state i s(ol) 1) ?1215ma v in = low for t > t reset , v out > v out(olh) p_6.5 power stage on-state resistance r ds(on)_25 1) ?6.8?m v in = high, t j = 25 c, v s = 13.5v, i l = +/-13.5a p_6.6 on-state resistance r ds(on)_150 ?1012m v in = high, t j = 150 c, v s = 13.5v, i l = +/-13.5a p_6.7 on-state resistance r ds(8v)_25 1) ?8?m v in = high, t j = 25 c, v s = 8v, i l = +/-13.5a p_6.8 on-state resistance r ds(8v)_150 1) ?11.515m v in = high, t j = 150 c, v s = 8v, i l = +/-13.5a p_6.9
datasheet 25 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea electrical characteristics btf50060-1tea on-state resistance at low supply voltage r ds(uv)_25 1) ?10.5?m v in = high, t j = 25 c, v s = 4.7v, i l = +/-13.5a p_6.10 on-state resistance at low supply voltage r ds(uv)_150 ?1925m v in = high, t j = 150c, v s = 4.7v, i l = +/-13.5a p_6.11 body diode forward voltage drop 2) -v sd(rev) 1) 300 700 1000 mv v in = 0v, i l = -13.5a (see figure 13 and figure 17 ) p_6.12 output leakage current 3) i l(off)_25 1) ?0.11a t j = 25c, v in = low, v out = 0v p_6.13 output leakage current i l(off)_85 1) ?0.11a t j = 85c, v in = low, v out = 0v p_6.14 output leakage current i l(off)_150 ?160a t j = 150c, v in = low, v out = 0v p_6.15 switching a resistive load slew rate 30% to 70% v s (d v /d t ) on 1) 22 43 108 v/s r l = 1 , v s = 13.5v (see figure 10 and figure 11 for definitions) p_6.16 slew rate 70% to 30% v s (d v /d t ) off 1) -90 -31 -13 v/s p_6.17 slew rate matching (d v /d t ) on - |(d v /d t ) off | d v /d t 1) -5 12 30 v/s p_6.18 turn on time to 90% v s t on ? 0.35 1.0 s p_6.19 turn off time to 10% v s t off ? 0.85 1.5 s p_6.20 turn on/off matching t on - t off -1.15 -0.5 -0.25 s p_6.21 wake up delay time t wake 1) ?2?s p_6.62 turn on rise time 10% to 90% v s t r 0.1 0.25 0.49 s p_6.22 turn off fall time 90% to 10% v s t f 0.12 0.35 0.83 s p_6.23 switching an inductive load source to drain smart clamping voltage 4) v sd(cl)_25 1) 32 40 ? v t j = 25c, i l = 40ma, p_6.26 source to drain smart clamping voltage v sd(cl)_150 1) 40 48 ? v t j = 150c, i l = 13.5a, p_6.27 input circuitry low level input voltage v in(l) -0.3 ? 0.8 v ? p_6.28 table 6 electrical characteristics: btf50060-1tea (cont?d) v s = 6v to 19v , t j = -40c to 150c , all voltages with respect to ground , positive current flowing into pin (unless otherwise specified) parameter symbol values unit note / test condition number min. typ. max.
datasheet 26 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea electrical characteristics btf50060-1tea high level input voltage v in(h) 2.0 ? 6 v ? p_6.29 input voltage hysteresis v in 1) ? 200 ? mv ? p_6.30 input pull down resistor r in 50 100 200 k ?p_6.31 protection short circuit shutdown threshold i l(sc) 60 75 95 a 8v < v s < 19v p_6.32 short circuit shutdown threshold at low supply voltage i l(sc)lv 1) 10 ? i l(sc) a4.7v < v s < 8v p_6.33 thermal shutdown temperature t jt 150 175 1) 200 1) c ? p_6.34 latch reset time t reset 1) 40 55 80 ms v in = low 6v < v s < 28v p_6.35 output leakage current while gnd disconnected 5) i out(gnd) 1) 00.51.0ma v s = v s(ext) , gnd pin disconnected p_6.40 over voltage protection of logic ic v z(ic) 45 50 ? v i gnd = 5ma p_6.41 sense output sense current steepness (reciprocal) k is 10.5 13 15 k see equation (6) i l1 = 13.5a, i l2 = 0a, v s - v is > 3v p_6.42 k is temperature variance k is(temp) 1) -2 0 +2 % p_6.43 sense current i l = i l1 i is(l1) 0.95 1.28 1.88 ma i l = 13.5a, v s - v is > 3v p_6.44 sense current offset i is(offset) 50 240 600 a v s - v is > 3v p_6.46 sense current offset temperature variance i is(offset) 1) -100 0 100 a see equation (8) p_6.47 leakage current at sense output i is(ll) 00.11a v in = low for t > t reset , v out < v out(oll) p_6.48 fault signal current at sense output i is(fault) 6.5 7.5 9 ma 6) v s - v is > 3v p_6.49 current sense settling time for turn on to 90% i is t sis(on) 1) 013s v s = 13.5v, r l = 1.0 , r is = 1.0k , c sense < 100pf, see figure 21 p_6.50 current sense settling time for turn off to 10% i is t sis(off) 1) 013s p_6.51 current sense settling time matching t sis(on) - t sis(off) 1) -0.5 0 0.5 s p_6.52 table 6 electrical characteristics: btf50060-1tea (cont?d) v s = 6v to 19v , t j = -40c to 150c , all voltages with respect to ground , positive current flowing into pin (unless otherwise specified) parameter symbol values unit note / test condition number min. typ. max.
datasheet 27 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea electrical characteristics btf50060-1tea current sense settling time after changes of the load current i l t sis(lc) 1) 012s v in = high, i l = 1a ? 50a r is = 1.0k , c sense < 100pf, see figure 21 p_6.53 turn on current sense settling time to i is(fault) in case of short circuit t sis(fault) 1) 013s r is = 1.0k , c sense < 100pf, see figure 16 p_6.54 open load at off output voltage threshold for open load detection in off state v out(olh) 55.56v v in = low, t > t reset , v s = 13.5v, see figure 23 , figure 43 and figure 44 p_6.55 output voltage threshold for resetting open load detection in off state v out(oll) 4.5 5 5.5 p_6.56 output voltage hysteresis for open load detection in off state v out(ol) 1) ? 500 ? mv p_6.57 intrinsic output pull-down resistance r out(gnd) 1) ?450?k v out = 4.5v, v in = low, for t > t reset p_6.63 undervoltage shutdown and restart undervoltage turn on voltage v s(uv)on ?4.44.7v v s increasing, v in = high p_6.58 undervoltage turn off voltage v s(uv)off ?4.14.4v v s decreasing, v in = high p_6.59 undervoltage turn on/off hysteresis v s(uv) 1) ?0.25?v v s(uv)on - v s(uv)off , v in = high p_6.60 undervoltage restart delay time t delay(uv) 468ms v in = high p_6.61 1) not subject to production test, specified by design 2) please note - during on state, the output voltage drop in invers e current operation is defined by v sd = r ds(on) x i l 3) see figure 28 for typical temperature dependency. 4) see figure 33 for typical temperature dependency. 5) all pins disconnected except for v s and out 6) valid after over temperature or s hort ciruit to ground until reset (t > t reset , v in = low, or undervoltag e detection) or during detection of open load in off state. table 6 electrical characteristics: btf50060-1tea (cont?d) v s = 6v to 19v , t j = -40c to 150c , all voltages with respect to ground , positive current flowing into pin (unless otherwise specified) parameter symbol values unit note / test condition number min. typ. max.
datasheet 28 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea electrical characteristics btf50060-1tea 6.2 parameter dependencies 6.2.1 power stage figure 25 typical standby current i s(off) as a function of the junction temperature t j v s = 13.5v, v in = low for t > t reset figure 26 typical on state resistance r ds(on) as a function of the junction temperature t j v s = 13.5v, i l = 13.5a, v in = high figure 27 typical on state resistance r ds(on) as a function of the supply voltage v s t j = 25c, i l = 13.5a, v in = high figure 28 typ. output leakage current i l(off) as a function of the junction temperature t j v s = 13.5v, v in = low 0 2 4 6 8 10 12 0 5 10 15 20 25 30 v s [v] r ds(on) [mohm]
datasheet 29 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea electrical characteristics btf50060-1tea figure 29 typical body diode forward voltage drop - v sd(rev) as a function of the junction temperature t j i l = -4a, v in = low figure 30 typical slew rate for turn on (d v /d t ) on and turn off -(d v /d t ) off as a function of the junction temperature t j r l = 1 , v s = 13.5v, 30% <=> 70% v s figure 31 typical turn on time t on and and turn off time t off as a function of the junction temperature t j r l = 1 , v s = 13.5v, figure 32 typical turn on rise time t r and and turn off fall time t f as a function of the junction temperature t j r l = 1 , v s = 13.5v, 10% <=> 90% v s
datasheet 30 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea electrical characteristics btf50060-1tea 6.2.2 input circuit figure 33 source to drain smart clamping voltage v sd(cl) as a function of the junction temperature t j i l = 40ma, v in = low figure 34 typ. input pull down resistor r in as a function of the junction temperature t j
datasheet 31 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea electrical characteristics btf50060-1tea 6.2.3 protection functions figure 35 typical short circuit shutdown threshold as a function of the supply voltage v s ; t j = 25c figure 36 typical short circuit shutdown threshold as a function of the junction temperature t j ; v s = 13.5v figure 37 typical short circuit overshooting as a function of the d i sc /d t (device is in on state when short circuit appears) t j = 25c 0 20 40 60 80 100 120 0.1 1 10 100 d i l /d t [a/s] i peak,sc [a]
datasheet 32 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea electrical characteristics btf50060-1tea 6.2.4 diagnosis functions figure 38 typical sense current slope k is as a function of the junction temperature t j v s = 13.5v, i l1 =13.5a, i l2 =0a, v in =high figure 39 typical sense current slope k is as a function of the supply voltage v s t j = 25c, i l1 =13.5a, i l2 =0a, v in =high figure 40 typical sense current slope k is as a function of the load current i l1 v s = 13.5v, t j = 25c, i l2 =0a, v in = high figure 41 typical sense current offset i is(offset) as a function of the junction temperature t j v s = 13.5v, v in = high 0 2000 4000 6000 8000 10000 12000 14000 16000 -50 0 50 100 150 t j [c] k is 0 50 100 150 200 250 300 -50 0 50 100 150 t j [c] i is(offset) [a]
datasheet 33 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea electrical characteristics btf50060-1tea figure 42 typical sense current offset i is(offset) as a function of the supply voltage v s t j = 25c, v in = high typical fault current i is(fault) at the sense output as a function of the voltage v sis = v s - v is v s = 13.5v, v in = high figure 43 typcical output voltage thresholds for open load detection during off v out(olh) and v out(oll) as a function of the supply voltage v s t j = 25c figure 44 typical output voltage thresholds for open load detection during off v out(olh) and v out(oll) as a function of the junction temperature t j v s = 13.5v 0 2 4 6 8 10 0102030 v s [v] v out(oll) , v out(olh) [v] vout(olh) vout(oll) 0 2 4 6 8 10 -50 0 50 100 150 t j [v] v out(oll) , v out(olh) [v] vout(olh) vout(oll)
datasheet 34 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea application information 7 application information note: the following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. figure 45 application diagram for sw itching an inductive load without external circuitry supporting open load detection in off state figure 46 application diagram with external circuitry supporting open load detection in off state note: this are very simplified examples of an applicatio n circuit. the function must be verified in the real application. table 7 typical application parameter 1) 1) values are calculated and not subject to production test. parameter symbol typical values note / condition range of typical pwm frequencies f pwm 0 hz ... 33 khz duty cycle = 0%, 10% ... 90% nominal load current i l(nom) 16.5 a t a = 85c, t j < 150c, r thja = 22k/w dc operation or f pwm < 1khz; v s = 19v typical load current at 10 khz i l(10khz) 11 a t a = 85c, t j < 150c, r thja = 22k/w f pwm = 10khz, duty cycle = 95% , v s = 19v typical load current at 25 khz i l(25khz) 7 a t a = 85c, t j < 150c, r thja = 22k/w f pwm = 25khz, duty cycle = 95% , v s = 19v, appl_example_l.emf in vs gnd r is 1k out load gnd v bat +5v is c e.g. xc866 r sense r input 10k 10k d 1 c vs 470f appl_example_ol.emf in vs gnd r is 1k out gnd v bat +5 v is c e.g. xc866 r sense r input 10k 10k r ol 3k3 r l_ol 33k t 1 load d 1 c vs 470f
datasheet 35 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea application information 7.1 further application information ? please contact us for information regarding the pin fmea ? for further information you may visit http://www.infineon.com/ table 8 bill of material reference value purpose r input 10 k protection of the c during overvoltage and reverse battery condition r sense 10 k protection of the c during overvoltage and reverse battery condition r is 1 k sense resistor. shunt resistor for measuring i is by the c?s ad converter. c vs 470f capacitor buffering the supply voltage switching an inductive load d 1 freewheeling diode for commutation of load current. depending on load current and thermal boundary conditions, it may be necessary to use active freewheeling by a mosfet, instead of the diode. external circuitry supporting open load at off detection t 1 bc807 switches the supply voltage for activa tion / deactivation of open load at off detection r ol 3.3k pull up resistor for open load detection in off state r l_ol 33k pull down resistor for deactivating open load detection in off state
datasheet 36 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea package outlines and parameters 8 package outlines and parameters figure 47 pg-to252-5-11 green product (rohs compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb- free finish on leads and suitable for pb-fre e soldering according to ipc/jedec j-std-020). table 9 parameter value jedec humidity category acc. j-std-020-d msl3 jedec classification temperature acc. j-std-020-d 260c dimensions in mm
datasheet 37 rev. 1.2, 2011-09-01 speed profet tm btf50060-1tea revision history 9 revision history revision date changes ds v1.2 2011-09-01 package name changed from pg-to252-5-311 to pg-to252-5-11 p_4.17 and p_4.18 reference updated to ansi/esda/jedec js-001-2010 p_6.12 footnote 2) : replacing v sd(inv) by v sd in formula. p_6.26 v sd(cl)_25 , p_6.27 v sd(cl)_150 and figure 33 ?output voltage drop limitation? renamed to ?source to drain smart clamping voltage? ds v1.1 2011-05-26 chapter 4.1 footnote 4) splitted. footnote 6) added. equation (7) and equation (8) corrected. (150c) p_6.3 i s(off)_150 condition set to v s = 13.5v p_6.16 (d v /d t ) on , p_6.17 (d v /d t ) off and p_6.18 d v /d t not subject to production test; all values changed. figure 30 , figure 31 and figure 32 added. p_6.46 i is(offset) , p_6.44 i is(l1) typical value and maximum limit changed. figure 41 and figure 42 adapted. figure 40 ?typical leakage current i is(ll) at the sense output as a function of the junction temperature t j ? and figure 41 ?typical leakage current i is(ll) at the sense output as a function of the supply voltage v s ? removed. ds v1.0 2010-06-24 init ial datasheet version.
edition 2011-09-01 published by infineon technologies ag 81726 munich, germany ? 2011 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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